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Advanced Technical Information
FMD 47-06KC5 FDM 47-06KC5 ID25 = 47 A VDSS = 600 V RDS(on) max = 0.045
CoolMOSTM 1) Pow er MOSFET
with
HiPerDynTM FRED
Buck and Boost Topologies
Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
3 3
T
ISOPLUS i4TM
D
4 1 2
5
1
4
D T
FMD
2
E72873
5
isolated back surface
FDM Features * Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 40 pF) * Fast CoolMOSTM 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness * Enhanced total power density * HiPerDynTM FRED - consisting of series connected diodes - enhanced dynamic behaviour for high frequency operation Applications * Switched mode power supplies (SMPS) * Uninterruptible power supplies (UPS) * Power factor correction (PFC) Advantages * Easy assembly: no screws or isolation foils required * Space savings * High power density * High reliability
MOSFET T Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt TC = 25C TC = 90C single pulse repetitive ID = 11 A; TC = 25C Conditions TVJ = 25C Maximum Ratings 600 20 47 32 1950 3 50 V V A A mJ mJ V/ns
MOSFET dV/dt ruggedness VDS = 0...480 V
Symbol
Conditions
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. 40 2.5 TVJ = 25C TVJ = 125C 3 50 100 6800 320 150 35 50 30 20 100 10 tbd tbd tbd 0.45 0.25 190 max. 45 3.5 10 m V A A nA pF pF nC nC nC ns ns ns ns mJ mJ mJ K/W K/W
RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erec off RthJC RthCH
VGS = 10 V; ID = 44 A VDS = VGS; ID = 3 mA VDS = VDSS; VGS = 0 V VGS = 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz VGS = 0 to 10 V; VDS = 400 V; ID = 44 A
VGS = 10 V; VDS = 400 V ID = 44 A; RG = 3.3
1)
CoolMOSTM is a trademark of
Infineon Technologies AG.
with heat transfer paste
IXYS reserves the right to change limits, test conditions and dimensions.
20090209a
(c) 2009 IXYS All rights reserved
1-3
Advanced Technical Information
FMD 47-06KC5 FDM 47-06KC5
MOSFET T Symbol
Source-Drain Diode Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 44 0.9 600 17 60 1.2 A V ns C A
IS VSD trr QRM IRM
VGS = 0 V IF = 44 A; VGS = 0 V IF = 44 A; -diF /dt = 100 A/s; VR = 400 V
Diode D (data for series connection) Symbol VRRM IF25 IF90 Symbol Conditions TVJ = 25C to 150C TC = 25C TC = 90C Conditions Maximum Ratings 600 95 56 V A A
Characteristic Values min. typ. max. 2.48 3.02 1.89 2.45 1 0.2 450 2 30 0.55 0.25 V V A A A mA A A ns K/W K/W
VF
IF = 30 A IF = 60 A IF = 30 A IF = 60 A
TVJ = 25C TVJ = 150C TVJ = 25C TVJ = 150C TVJ = 45C TVJ = 25C
IR IFSM IRM trr RthJC RthCH
VR = VRRM t = 10 ms (50 Hz), sine; IF = 30 A; VR = 100 V; -diF /dt = 200 A/s with heat transfer paste
Component Symbol TVJ Tstg VISOL FC Symbol Conditions operating storage IISOL < 1 mA; 50/60 Hz mounting force with clip Conditions Maximum Ratings -55...+150 -55...+125 2500 20...120 C C V~ N
Characteristic Values min. typ. 40 max.
CP dS, dA dS, dA
Weight
coupling capacity between shorted pins and mounting tab in the case
pF mm mm
pin - pin pin - backside metal
1.7 5.5
9
g
IXYS reserves the right to change limits, test conditions and dimensions.
20090209a
(c) 2009 IXYS All rights reserved
2-3
Advanced Technical Information
FMD 47-06KC5 FDM 47-06KC5
ISOPLUS i4TM Outline
IXYS reserves the right to change limits, test conditions and dimensions.
20090209a
(c) 2009 IXYS All rights reserved
3-3

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